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Opening
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Welcome on behalf of the
CrystalClear consortium
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8:30
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Deposition systems
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Saul Winderbaum
Roth and Rau AG, Germany
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A personal view on the
status of PV manufacturing industrial processes
2005.
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8:45
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B. Hoex, P.J. van den Oever
Technical university Eindhoven, The Netherlands
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Silicon
nitride antireflection coatings with excellent surface and bulk
passivation properties deposited at high rates by the expanding
thermal plasma.
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9:10
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Thomas Pernau
Centrotherm GmbH, Germany
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A closer look inside
Centrotherm parallel plate PECVD reactors.
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9:35
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Coffee break
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10:00
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Winfried Wolke
Fraunhofer ISE, Germany
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Bulk passivation with
sputtered silicon nitride: a comparison to PECVD.
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10:15
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Vasco Verlaan
University of Utrecht,
The Netherlands
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Hydrogen evolution in
hot-wire deposited SiNx layers during a
800°C anneal with calibrated
proportionality constants.
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10:40
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Summary
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11:05
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Bulk passivation I
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Markus Rinio
Fraunhofer ISE-LSG, Germany
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Recombination
activity of extended defects in mc-Si after different solar cell
processes.
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11:10
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Giso Hahn
University of Konstanz, Germany
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Hydrogen
kinetics in crystalline silicon PECVD SiN studies in mc and
Cz silicon.
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11:35
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Lode Carnel
IMEC, Belgium
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Hydrogenation of thin film
poly-crystalline silicon solar cells.
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12:00
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Discussion
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12:25
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Lunch
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12:50
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Bulk passivation II
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Bhushan Sopori
National Renewable Energy Laboratory, USA
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Surface
Damage-Mediated H Diffusion during SiN:H Processing.
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13:35
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Wolfhard Beyer
FZJ, Germany
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Effusion of hydrogen and
(implanted) rare gases from amorphous silicon
materials.
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14:00
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Coffee break
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14:25
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Ingrid Romijn
ECN, The Netherlands
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SiNx:H passivation: How to
obtain the maximum efficiency for mc-Si solar cells.
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14:40
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Harold Dekkers
IMEC, Belgium
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Release mechanism of
bonded hydrogen from a-SiNx:H layers for bulk passivation of
multi-crystalline silicon solar cells.
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15:15
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Discussion
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15:50
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Coffee break
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16:15
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Surface passivation
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Jan Schmidt
ISFH, Germany
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Surface Passivation of
Silicon Solar Cells using SiN: the effect of space charge
recombination.
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16:30
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Kyuyoul Lee
Samsung SDI, Korea
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The Effects of
SiNx:H/a-Si Double Layer as Passivation Layer on c-Si
Substrate.
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16:55
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J-F. Lelièvre
LPM-INSA de Lyon, France
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Influence of
stoechiometry and deposition temperatures on surface and bulk
passivation properties of hydrogenatated silicon nitride SiNx:H
deposited by LF-PECVD
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17:45
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L. Serenelli
ENEA, Italy
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Electrical characterization of SiNx surface passivation
layers under uv light exposure.
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18:10
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Guido Agostinelli
IMEC, Belgium
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Limitations of SiNx:H
as rear surface passivation layer for industrial silicon solar
cells.
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18:35
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Discussion
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19:00
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Conclusions and wrap-up
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19:25
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Dinner
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20.00
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